Skip to main content

Hitachi

Hitachi Power Semiconductors

IGBTs

Package IC(A) VCES Type Name Feature Status*1 PT
2in1 Diode 400 4500 MDM400H45E2 High isolation package M High Isolation
1in1 IGBT 1000 4500 MBN1000FH45F-H High isolation package M High Isolation
1in1 IGBT 1500 4500 MBN1500FH45F-H High isolation package M High Isolation
1in1 IGBT 1000 4500 MBN1000FH45F High isolation package M High Isolation
2in1 Diode 800 4500 MDM800H45E2-H High isolation package M High Isolation
1in1 IGBT 1200 4500 MBN1200H45E2-H High isolation package M High Isolation
1in1 IGBT 1500 4500 MBN1500FH45F High isolation package M High Isolation
1in1 IGBT 1200 4500 MBN1200H45E2 High isolation package M High Isolation
2in1 IGBT 200 4500 MBM200H45E2-H High isolation package M High Isolation
2in1 Diode 1200 4500 MDM1200H45E2 High isolation package M High Isolation
1in1 IGBT 900 4500 MBN900D45A N Standard
2in1 Diode 800 4500 MDM800H45E2 High isolation package M High Isolation
2in1 Diode 1200 4500 MDM1200H45E2-H High isolation package M High Isolation
1in1 IGBT 600 4500 MBN600E45A N Standard
1in1 IGBT 800 4500 MBN800H45E2-H High isolation package M High Isolation
1in1 IGBT 800 4500 MBN800H45E2 High isolation package M High Isolation
2in1 Diod 600 4500 MDM600E45A N Standard

*1 M:Mass production, W:Working sample, D:Discontinued, U:Under development, S:Under study