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Hitachi

Hitachi Power Semiconductors

SiC

SiC (Full SiC)

  • Ultra low switching loss with SiC MOSFET
  • High current density package
  • Low Inductance
  • Scalable, Easy Paralleling

SiC (Hybrid SiC)

  • Advanced Trench HiGT - sLiPT
  • SiC Schottky Barrier Diode
  • Ultra low recovery loss with SiC diode

HPMSIM

Hitachi’s online semiconductor simulations tool

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