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Hitachi

Hitachi Power Semiconductors

IGBTs

Package IC(A) VCES Type Name Feature Status*1 PT
1in1 IGBT 1800 3300 MBN1800F33F M Standard
2in1 IGBT 450 3300 MBM450FS33F nHPD2 M Standard
2in1 IGBT 250 3300 MBM250H33E3 High isolation package M High Isolation
1in1 IGBT 1200 3300 MBN1200F33F M Standard
Chopper 400 3300 MBL400E33D M Standard
1in1 IGBT 1200 3300 MBN1200E33D N Standard
1in1 IGBT 1500 3300 MBN1500E33E2 M Standard
1in1 SiC 1200 3300 MBN1200F33F-C M IHM 130x140mm
1in1 SiC 1800 3300 MBN1800F33F-C M IHM 190x140mm
2in1 IGBT 400 3300 MBM400E33D-MFR Ultra low switching loss and recovery loss / For high frequency application N Standard
2in1 Diode 800 3300 MDM800E33D M Standard
2in1 IGBT 500 3300 MBM500E33E2-R M Standard
Chopper 800 3300 MBL800E33D N Standard
2in1 Diode 1200 3300 MDM1200FH33F High isolation package M High Isolation
1in1 IGBT 800 3300 MBN800E33E M Standard
1in1 IGBT 1800 3300 MBN1800FH33F High isolation package M High Isolation
Chopper 1000 3300 MBL1000E33E2-B M Standard
1in1 IGBT 1500 3300 MBN1500E33E3 M Standard
1in1 IGBT 1200 3300 MBN1200H33D High isolation package N High Isolation
1in1 IGBT 800 3300 MBN800E33D N Standard
1in1 IGBT 1200 3300 MBN1200E33E M Standard
2in1 Diode 1200 3300 MDM1200E33D M Standard
Chopper 800 3300 MBL800E33E N Standard
1in1 IGBT 1000 3300 MBN1000E33E2 M Standard
1in1 IGBT 800 3300 MBN800E33D-AX Low recovery loss / For high frequency application N Standard

*1 M:Mass production, W:Working sample, D:Discontinued, U:Under development, S:Under study