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Hitachi

Hitachi Power Semiconductors

Technical Literature

IGBT

Title First author Submission Posting Comment
Title A Novel Hybrid Power Module with Dual Side-Gate HiGT and SiC-SBD First author Y.Takeuchi Submission 201705 Posting

ISPSD

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Title Dual Side-Gate HiGT Breaking Through the Limitation of IGBT Loss Reduction First author T.Miyoshi Submission 201705 Posting

PCIM

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Title Side Gate HiGT with Low Loss and Low Noise First author Submission 201701 Posting

Hitachi Review 2017 Vol.99 No.1

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Written in Japanese

Title Side Gate HiGT with Low dv/dt Noise and Low Loss First author M.Shiraishi Submission 201606 Posting

ISPSD

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Title New 4.5kV IGBT Module with Low Power Loss and High Current Ratings First author T.Matsumoto Submission 201505 Posting

Mesago PCIM 2015

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Title High Voltage Module with Low Internal Inductance for Next Chip Generation - Next High Power Density Dual (nHPD2) First author D.Kawase Submission 201505 Posting

Mesago PCIM 2015

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Title New 1800A/3.3kV IGBT Module Using Advanced Trench HiGT Technoligy and Module Design Optimization First author T.Kushima Submission 201405 Posting

Mesago PCIM 2014

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Title Novel 3.3-kV Advanced Trench HiGT with Low Loss and Low dv/dt Noise First author Y.Toyota Submission 201305 Posting

ISPSD

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Title 1.7kV Trench IGBT with Deep and Separate Floating p-Layer Designed for Low Loss, Low EMI Noise, and High Reliability First author S.Watanabe Submission 201105 Posting

ISPSD

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SiC

Title First author Submission Posting Comment
Title High reliability termination technology for SiC Power Devices First author H.Onose Submission 201603 Posting

IEEJ

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Written in Japanese

Title Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depeletion-layer Capacitance (MDC) First author H.Matsushima Submission 201509 Posting

SSDM

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SiC-MOS

Title First author Submission Posting Comment
Title Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults First author R.Fujita Submission 201709 Posting

ICSCRM

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Title Channel Properties of SiC Trench-Etched Double-Diffused MOS (TED MOS) First author N.Tega Submission 201602 Posting

IEEE Transactions on Electron Devices

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Title Novel Trench-etched Double-diffused SiC MOS (Ted MOS) to overcome tradeoff between RonA and Qgd First author N.Tega Submission 201505 Posting

ISPSD

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Title Full-SiC 3.3kV/450A low inductance module; nHPD2 with smooth switching First author T.Ishigaki Submission 201505 Posting

Mesago PCIM 2017

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SiC-SBD

Title First author Submission Posting Comment
Title 3.3KV hybrid module using SiC-SBD First author K.Ogawa Submission 201203 Posting

IEEJ

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Written in Japanese

Title Traction inverter that applies hybrid module using 3-kV SiC-SBDs First author K.Ishikawa Submission 201006 Posting

IPEC 2010

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Paper: The 2010 International Power Electronics Conference - ECCE ASIA - (2010)

Sintered Copper

Title First author Submission Posting Comment
Title High Power Density Side-Gate HiGT Modules with Sintered Cu Having Superior High-Temperature Reliability to Sintered Ag First author T.Furukawa Submission 201705 Posting

ISPSD

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Title Highly Reliable and Lead-Free High Power IGBT Modules Using Novel Copper Sintering Die attachment First author A.Konno Submission 201605 Posting

PCIM

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Title New Bonding Technique Using Copper Oxide Materials First author T.Morita Submission 201403 Posting

Materials Transactions

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Reliability

Title First author Submission Posting Comment
Title Improvement of Power Cycling Reliability of Sn-Cu Based Solder First author T.Miyazaki Submission 201507 Posting

IMAPS
International Microelectronics Assembly and Packaging Society

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Title Study of Heat Transfer Measurement Method of Water-cooled Heatsink First author K.Horiuchi Submission 201506 Posting

HTSJ

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Lecture

Title High precision thermal resistance measurement technology for Direct Water Cooling Module First author K.Horiuchi Submission 201505 Posting

JMA

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Lecture, Japanese

Title Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing First author K.Sasaki Submission 201309 Posting

Microelectronics Reliability

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Contribution
Volume 53, Issue 9-11, 2013, pp1766-1770

Title Effect of Heat Generation on Fatigue-Crack Propagation of Solder in Power Devices First author S.Hiramitsu Submission 201107 Posting

ASME InterPACK

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Lecture
IPACK2011-52247, pp. 345-350

Title Small size, low thermal resistance and high reliability packaging technologies of IGBT module for wind power applications First author K.Sasaki Submission 201005 Posting

PCIM

Comment

Lecture

Direct Water Cooling

Title First author Submission Posting Comment
Title Advanced Direct-water-cool Power Module having Pinfin Heatsink with Low Pressure Drop and High Heat Transfer First author K.Horiuchi Submission 201305 Posting

ISPSD2013

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High Voltage IC

Title First author Submission Posting Comment
Title Low On-Resistance High Voltage Thin Layer SOI LDMOS Transistors with Stepped Field Plates First author K.Hara Submission 201705 Posting

ISPSD2017

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Title A New Conpact, Low On Resistace and High Off Isolation High Voltage Analog Switch IC Without Using High Voltage Power Supplies for Ultrasound Imaging System First author F.Yamashita Submission 201606 Posting

ISPSD2016

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Title 600V Single Chip Inverter IC with New SOI Technology First author K.Hara Submission 201406 Posting

ISPSD2014

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