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Title | First author | Submission | Posting | Comment |
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Title A Novel Hybrid Power Module with Dual Side-Gate HiGT and SiC-SBD | First author Y.Takeuchi | Submission 201705 |
Posting
ISPSD |
Comment |
Title Dual Side-Gate HiGT Breaking Through the Limitation of IGBT Loss Reduction | First author T.Miyoshi | Submission 201705 |
Posting
PCIM |
Comment |
Title Side Gate HiGT with Low Loss and Low Noise | First author | Submission 201701 |
Posting
Hitachi Review 2017 Vol.99 No.1 |
Comment
Written in Japanese |
Title Side Gate HiGT with Low dv/dt Noise and Low Loss | First author M.Shiraishi | Submission 201606 |
Posting
ISPSD |
Comment |
Title New 4.5kV IGBT Module with Low Power Loss and High Current Ratings | First author T.Matsumoto | Submission 201505 |
Posting
Mesago PCIM 2015 |
Comment |
Title High Voltage Module with Low Internal Inductance for Next Chip Generation - Next High Power Density Dual (nHPD2) | First author D.Kawase | Submission 201505 |
Posting
Mesago PCIM 2015 |
Comment |
Title New 1800A/3.3kV IGBT Module Using Advanced Trench HiGT Technoligy and Module Design Optimization | First author T.Kushima | Submission 201405 |
Posting
Mesago PCIM 2014 |
Comment |
Title Novel 3.3-kV Advanced Trench HiGT with Low Loss and Low dv/dt Noise | First author Y.Toyota | Submission 201305 |
Posting
ISPSD |
Comment |
Title 1.7kV Trench IGBT with Deep and Separate Floating p-Layer Designed for Low Loss, Low EMI Noise, and High Reliability | First author S.Watanabe | Submission 201105 |
Posting
ISPSD |
Comment |
Title | First author | Submission | Posting | Comment |
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Title High reliability termination technology for SiC Power Devices | First author H.Onose | Submission 201603 |
Posting
IEEJ |
Comment
Written in Japanese |
Title Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depeletion-layer Capacitance (MDC) | First author H.Matsushima | Submission 201509 |
Posting
SSDM |
Comment |
Title | First author | Submission | Posting | Comment |
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Title Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults | First author R.Fujita | Submission 201709 |
Posting
ICSCRM |
Comment |
Title Channel Properties of SiC Trench-Etched Double-Diffused MOS (TED MOS) | First author N.Tega | Submission 201602 |
Posting
IEEE Transactions on Electron Devices |
Comment |
Title Novel Trench-etched Double-diffused SiC MOS (Ted MOS) to overcome tradeoff between RonA and Qgd | First author N.Tega | Submission 201505 |
Posting
ISPSD |
Comment |
Title Full-SiC 3.3kV/450A low inductance module; nHPD2 with smooth switching | First author T.Ishigaki | Submission 201505 |
Posting
Mesago PCIM 2017 |
Comment |
Title | First author | Submission | Posting | Comment |
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Title 3.3KV hybrid module using SiC-SBD | First author K.Ogawa | Submission 201203 |
Posting
IEEJ |
Comment
Written in Japanese |
Title Traction inverter that applies hybrid module using 3-kV SiC-SBDs | First author K.Ishikawa | Submission 201006 |
Posting
IPEC 2010 |
Comment
Paper: The 2010 International Power Electronics Conference - ECCE ASIA - (2010) |
Title | First author | Submission | Posting | Comment |
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Title High Power Density Side-Gate HiGT Modules with Sintered Cu Having Superior High-Temperature Reliability to Sintered Ag | First author T.Furukawa | Submission 201705 |
Posting
ISPSD |
Comment |
Title Highly Reliable and Lead-Free High Power IGBT Modules Using Novel Copper Sintering Die attachment | First author A.Konno | Submission 201605 |
Posting
PCIM |
Comment |
Title New Bonding Technique Using Copper Oxide Materials | First author T.Morita | Submission 201403 |
Posting
Materials Transactions |
Comment |
Title | First author | Submission | Posting | Comment |
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Title Improvement of Power Cycling Reliability of Sn-Cu Based Solder | First author T.Miyazaki | Submission 201507 |
Posting
IMAPS
|
Comment |
Title Study of Heat Transfer Measurement Method of Water-cooled Heatsink | First author K.Horiuchi | Submission 201506 |
Posting
HTSJ |
Comment
Lecture |
Title High precision thermal resistance measurement technology for Direct Water Cooling Module | First author K.Horiuchi | Submission 201505 |
Posting
JMA |
Comment
Lecture, Japanese |
Title Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing | First author K.Sasaki | Submission 201309 |
Posting
Microelectronics Reliability |
Comment
Contribution
|
Title Effect of Heat Generation on Fatigue-Crack Propagation of Solder in Power Devices | First author S.Hiramitsu | Submission 201107 |
Posting
ASME InterPACK |
Comment
Lecture
|
Title Small size, low thermal resistance and high reliability packaging technologies of IGBT module for wind power applications | First author K.Sasaki | Submission 201005 |
Posting
PCIM |
Comment
Lecture |
Title | First author | Submission | Posting | Comment |
---|---|---|---|---|
Title Advanced Direct-water-cool Power Module having Pinfin Heatsink with Low Pressure Drop and High Heat Transfer | First author K.Horiuchi | Submission 201305 |
Posting
ISPSD2013 |
Comment |
Title | First author | Submission | Posting | Comment |
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Title Low On-Resistance High Voltage Thin Layer SOI LDMOS Transistors with Stepped Field Plates | First author K.Hara | Submission 201705 |
Posting
ISPSD2017 |
Comment |
Title A New Conpact, Low On Resistace and High Off Isolation High Voltage Analog Switch IC Without Using High Voltage Power Supplies for Ultrasound Imaging System | First author F.Yamashita | Submission 201606 |
Posting
ISPSD2016 |
Comment |
Title 600V Single Chip Inverter IC with New SOI Technology | First author K.Hara | Submission 201406 |
Posting
ISPSD2014 |
Comment |